Abstract: Compared with Silicon materials, Silicon Carbide (SiC) devices are widely used due to their advantages of higher voltage resistance, higher temperature resistance, faster switching speed and ...
Department of Industrial and Manufacturing Engineering, FAMU-FSU College of Engineering, Florida State University, Tallahassee, Florida 32310, United States High-Performance Materials Institute, ...
Abstract: SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices ...
Welcome to the 2025 holiday season, With hope, we’ll all get a healthy dose of well needed cheer. In today’s column, I’ll offer advice on how to create your own holiday greeting cards and DIY gifts ...
Hands-on courses will be powered by Pulsar microcontrollers across universities and professional programs. Innatera, a leader in brain-like neuromorphic computing for ultra-low-power intelligence at ...
GlobalFoundries (GF) will host a webcast at 10:00 a.m. ET on December 3, 2025, to outline its strategy for the fast-emerging physical AI market. Executives will detail demand trends, technology ...
AUO is accelerating its development of artificial intelligence hardware, unveiling what it claims is the world's first ultra-low-power LTPS display panel. The company is simultaneously intensifying ...
Latest Avicena LightBundle technology delivers industry-leading Tx power of 80fJ/bit addressing next generation AI infrastructure requirements ST. LOUIS–(BUSINESS WIRE)–#innovation–Avicena, the leader ...
FAYETTEVILLE, Ark. (KNWA/KFTA) — The University of Arkansas has opened the Multi-User Silicon Carbide Facility, or MUSiC, which it describes as the only openly accessible silicon carbide fabrication ...
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