EDN

RF GaN-on-Si transistor sets new performance benchmark

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
EDN

RF Power LDMOS Transistors

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...
Ars Technica

High-performance graphene transistors made using sticky tape

Graphene could be a useful material for high-performance transistors because it carries electrons faster than silicon. Since graphene transistors can’t be turned off, they’re more useful for RF ...
New Electronics

RF LDMOS power transistors

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...