A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire ...
A Rice team led by professors Matteo Pasquali and Angel Martí has simplified handling of the highly valuable nanotubes to make them more suitable for large-scale applications, including aerospace, ...
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New gallium nitride chip platform helps engineers get chip designs right the first time
Keysight Technologies and WIN Semiconductors have introduced a joint design workflow that aims to ...
Researchers have developed a new process that makes use of existing industry standard techniques for making III-nitride semiconductor materials, but results in layered materials that will make LEDs ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire ...
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