Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

The evaluation samples incorporate an in-house newly developed controller for UFS 5.0 and Kioxia's 8th-generation BiCS FLASH (TM), and are available in capacities of 512 GB and 1 TB. The package has ...

This voice experience is generated by AI. Learn more. This voice experience is generated by AI. Learn more. This is my fourth and last blog on digital storage and memory projections for 2026 The first ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Neuromorphic computing aims to replicate the functional architecture of the human brain by integrating electronic components that mimic synaptic and neuronal behaviours. Central to this endeavour are ...

TL;DR: South Korean memory rivals SK hynix and Samsung team up to expedite LPDDR6-PIM (Processing-In-Memory) technology for the future of on-device AI. SK hynix and Samsung are massive memory rivals ...